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| PNP Silicon AF Transistors BCP 51 ... BCP 53 For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q Complementary types: BCP 54 ... BCP 56 (NPN) q Type BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 Marking BCP 51 BCP 51-10 BCP 51-16 BCP 52 BCP 52-10 BCP 52-16 BCP 53 BCP 53-10 BCP 53-16 Ordering Code (tape and reel) Q62702-C2107 Q62702-C2109 Q62702-C2110 Q62702-C2146 Q62702-C2112 Q62702-C2113 Q62702-C2147 Q62702-C2115 Q62702-C2116 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCP 51 ... BCP 53 Maximum Ratings Parameter Collector-emitter voltage RBE 1 k Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C1) Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Symbol BCP 51 VCE0 VCER VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 45 45 45 Values BCP 52 60 60 60 5 1 1.5 100 200 1.5 150 BCP 53 80 100 100 Unit V A mA W C - 65 ... + 150 72 17 K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BCP 51 ... BCP 53 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP 51 BCP 52 BCP 53 Collector-base breakdown voltage IC = 100 A, IB = 0 BCP 51 BCP 52 BCP 53 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, VCE = 2 V BCP 51/BCP 52/BCP 53 BCP 51/BCP 52/BCP 53-10 BCP 51/BCP 52/BCP 53-16 IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage1) IC = 500 mA, VCE = 2 V AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz fT - 125 - MHz V(BR)CE0 45 60 80 V(BR)CB0 45 60 100 V(BR)EB0 ICB0 - - IEB0 hFE 25 40 63 100 25 VCEsat VBE - - - - 100 160 - - - - 250 160 250 - 0.5 1 V - - - - 100 20 10 nA A A Values typ. max. Unit V - - - - - - - - - - - - - - 5 - 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 3 BCP 51 ... BCP 53 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V DC current gain hFE = f (IC) VCE = 2 V Collector cutoff current ICB0 = f (TA) VCB = 30 V Semiconductor Group 4 BCP 51 ... BCP 53 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 5 |
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